- RS-stocknr.:
- 754-5392
- Fabrikantnummer:
- IGW40T120FKSA1
- Fabrikant:
- Infineon
Tijdelijk niet op voorraad – nieuwe voorraad verwacht op 16-05-2024, met een levertijd van 1 werkdag.
Toegevoegd
Prijs Per stuk
€ 6,31
(excl. BTW)
€ 7,64
(incl. BTW)
Aantal stuks | Per stuk |
1 - 9 | € 6,31 |
10 - 24 | € 6,00 |
25 - 49 | € 5,74 |
50 - 99 | € 5,49 |
100 + | € 5,12 |
- RS-stocknr.:
- 754-5392
- Fabrikantnummer:
- IGW40T120FKSA1
- Fabrikant:
- Infineon
Wetgeving en compliance
Productomschrijving
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
Collector-emitter voltage range 1100 to 1600V
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
Very low VCEsat
Low turn-off losses
Short tail current
Low EMI
Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 270 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.13 x 21.1 x 5.21mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |
- RS-stocknr.:
- 754-5392
- Fabrikantnummer:
- IGW40T120FKSA1
- Fabrikant:
- Infineon