IXYS IXYN80N90C3H1 IGBT, 340 A 900 V, 4-Pin SOT-227B

  • RS-stocknr. 791-7422
  • Fabrikantnummer IXYN80N90C3H1
  • Fabrikant IXYS
Datasheets
Wetgeving en compliance
Conform
Productomschrijving

IGBT Discretes, IXYS XPT series

The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 340 A
Maximum Collector Emitter Voltage 900 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 500 W
Package Type SOT-227B
Mounting Type Panel Mount
Channel Type N
Pin Count 4
Switching Speed 50kHz
Transistor Configuration Single
Length 38.23mm
Width 25.07mm
Height 9.6mm
Dimensions 38.23 x 25.07 x 9.6mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
5 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
42 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each
31,00
(excl. BTW)
37,51
(incl. BTW)
Aantal stuks
Per stuk
1 - 1
€ 31,00
2 - 4
€ 28,41
5 - 9
€ 27,02
10 - 19
€ 25,67
20 +
€ 24,38
Verpakkingsopties
Related Products
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
The Insulated Gate Bipolar Transistor or IGBT is ...
Description:
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by ...
Fuji Electric has been developing IGBT modules designed ...
Description:
Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT ...