STMicroelectronics, Type N-Channel IGBT 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 792-5814P
- Fabrikantnummer:
- STGW80H65DFB
- Fabrikant:
- STMicroelectronics
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- Verzending vanaf 01 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 5 - 9 | € 5,15 |
| 10 - 24 | € 4,64 |
| 25 - 49 | € 4,37 |
| 50 + | € 4,32 |
*prijsindicatie
- RS-stocknr.:
- 792-5814P
- Fabrikantnummer:
- STGW80H65DFB
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 469W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Lead (Pb) Free package, ECOPACK | |
| Series | H | |
| Height | 20.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 469W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Lead (Pb) Free package, ECOPACK | ||
Series H | ||
Height 20.15mm | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.