IXYS IXA37IF1200HJ, Type N-Channel XPT IGBT, 58 A 1200 V, 3-Pin ISOPLUS247, PCB

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Verpakkingsopties
RS-stocknr.:
808-0215
Artikelnummer Distrelec:
302-53-265
Fabrikantnummer:
IXA37IF1200HJ
Fabrikant:
IXYS
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Merk

IXYS

Maximum Continuous Collector Current Ic

58A

Product Type

XPT IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

195W

Package Type

ISOPLUS247

Mount Type

PCB

Channel Type

Type N

Pin Count

3

Switching Speed

70ns

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.8V

Maximum Operating Temperature

125°C

Length

20.6mm

Series

Planar

Standards/Approvals

Epoxy meets UL 94V-0, IEC 60747, RoHS

Width

0.1 mm

Automotive Standard

No

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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