- RS-stocknr.:
- 862-9362P
- Fabrikantnummer:
- ISL9V5036S3ST
- Fabrikant:
- Fairchild Semiconductor
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 14-01-2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (geleverd op een rol) Quantities below 150 on continuous strip
€ 3,484
(excl. BTW)
€ 4,216
(incl. BTW)
Aantal stuks | Per stuk |
10 - 95 | € 3,484 |
100 - 245 | € 2,786 |
250 - 495 | € 2,628 |
500 + | € 2,482 |
- RS-stocknr.:
- 862-9362P
- Fabrikantnummer:
- ISL9V5036S3ST
- Fabrikant:
- Fairchild Semiconductor
Wetgeving en compliance
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 46 A |
Maximum Collector Emitter Voltage | 420 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 250 W |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.67 x 9.65 x 4.83mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |