Infineon IGW60T120FKSA1 IGBT, 100 A 1200 V, 3-Pin TO-247

  • RS-stocknr. 906-4472
  • Fabrikantnummer IGW60T120FKSA1
  • Fabrikant Infineon
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Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties
Kenmerk Waarde
Maximum Continuous Collector Current 100 A
Maximum Collector Emitter Voltage 1200 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 375 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Switching Speed 1MHz
Transistor Configuration Single
Length 16.13mm
Width 5.21mm
Height 21.1mm
Dimensions 16.13 x 5.21 x 21.1mm
Minimum Operating Temperature -40 °C
Maximum Operating Temperature +150 °C
Energy Rating 15.8mJ
Gate Capacitance 3700pF
54 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
48 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each (In a Pack of 2)
7,04
(excl. BTW)
8,52
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
2 +
€ 7,04
€ 14,08
*prijsindicatie
Verpakkingsopties