Infineon IGW60T120FKSA1 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 906-4472
Fabrikantnummer:: IGW60T120FKSA1
Fabrikant:: Infineon

Infineon IGW60T120FKSA1 IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

2 op voorraad - levertijd is 1 werkdag(en).

Prijs Elk (in een pakket van 2)

€ 6,74

(excl. BTW)

€ 8,16

(incl. BTW)

Aantal stuks	Per stuk	Per pak*
2 +	€ 6,74	€ 13,48
*prijsindicatie

RS-stocknr.:: 906-4472
Fabrikantnummer:: IGW60T120FKSA1
Fabrikant:: Infineon

Datasheets

Wetgeving en compliance

Productomschrijving

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties

Kenmerk	Waarde
Maximum Continuous Collector Current	100 A
Maximum Collector Emitter Voltage	1200 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	375 W
Package Type	TO-247
Mounting Type	Through Hole
Channel Type	N
Pin Count	3
Switching Speed	1MHz
Transistor Configuration	Single
Dimensions	16.13 x 5.21 x 21.1mm
Minimum Operating Temperature	-40 °C
Energy Rating	15.8mJ
Maximum Operating Temperature	+150 °C
Gate Capacitance	3700pF

RS-stocknr.:: 906-4472
Fabrikantnummer:: IGW60T120FKSA1
Fabrikant:: Infineon