Infineon IGW15T120FKSA1, Type N-Channel Power Semiconductor, 30 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 914-0211
- Fabrikantnummer:
- IGW15T120FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 4 eenheden)*
€ 18,14
(excl. BTW)
€ 21,948
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 4 - 16 | € 4,535 | € 18,14 |
| 20 - 36 | € 4,308 | € 17,23 |
| 40 - 96 | € 4,128 | € 16,51 |
| 100 - 196 | € 3,855 | € 15,42 |
| 200 + | € 3,63 | € 14,52 |
*prijsindicatie
- RS-stocknr.:
- 914-0211
- Fabrikantnummer:
- IGW15T120FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | Power Semiconductor | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC1, Pb-free lead plating, RoHS | |
| Automotive Standard | No | |
| Energy Rating | 4.1mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type Power Semiconductor | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series TrenchStop | ||
Standards/Approvals JEDEC1, Pb-free lead plating, RoHS | ||
Automotive Standard No | ||
Energy Rating 4.1mJ | ||
Infineon TrenchStop IGBT Transistors, 1100 to 1600V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 1100 to 1600V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- Infineon IGW15T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW15N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW25T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW60T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW25N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW08T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW15N120H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW25N120T2FKSA1 IGBT 3-Pin TO-247, Through Hole