Nexperia NextPowerS3 Type N-Channel MOSFET, 300 A, 30 V Enhancement, 5-Pin LFPAK PSMN0R9-30YLDX

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Verpakkingsopties
RS-stocknr.:
219-275
Fabrikantnummer:
PSMN0R9-30YLDX
Fabrikant:
Nexperia
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Merk

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK

Series

NextPowerS3

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

0.87mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

291W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

109nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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