onsemi NTMFS Type N-Channel MOSFET, 323 A, 40 V Enhancement, 8-Pin SO-8FL NTMFS0D7N04XMT1G
- RS-stocknr.:
- 220-593
- Fabrikantnummer:
- NTMFS0D7N04XMT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,07
(excl. BTW)
€ 6,135
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,014 | € 5,07 |
| 50 - 95 | € 0,964 | € 4,82 |
| 100 - 495 | € 0,892 | € 4,46 |
| 500 - 995 | € 0,82 | € 4,10 |
| 1000 + | € 0,792 | € 3,96 |
*prijsindicatie
- RS-stocknr.:
- 220-593
- Fabrikantnummer:
- NTMFS0D7N04XMT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 323A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NTMFS | |
| Package Type | SO-8FL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 134W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 72.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Height | 1mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Width | 5.15 mm | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 323A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NTMFS | ||
Package Type SO-8FL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 134W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 72.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Height 1mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Width 5.15 mm | ||
- Land van herkomst:
- MY
The ON Semiconductor Power MOSFET Technology with best-in-class On-Resistance for motor driver application. Lower On-Resistance and less gate charge can reduce conduction loss and driving loss. Good softness control for body diode reverse recovery can reduce voltage spike stress without extra snubber circuit in application.
Halogen Free
RoHS Compliant
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