ROHM HT8KB6 1 Type P-Channel MOSFET, 15 A, 40 V Depletion, 8-Pin HSMT-8 HT8KB6TB1
- RS-stocknr.:
- 265-123
- Fabrikantnummer:
- HT8KB6TB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,05
(excl. BTW)
€ 8,53
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 100 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,705 | € 7,05 |
| 100 - 240 | € 0,67 | € 6,70 |
| 250 - 490 | € 0,62 | € 6,20 |
| 500 - 990 | € 0,571 | € 5,71 |
| 1000 + | € 0,55 | € 5,50 |
*prijsindicatie
- RS-stocknr.:
- 265-123
- Fabrikantnummer:
- HT8KB6TB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HT8KB6 | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 17.2mΩ | |
| Channel Mode | Depletion | |
| Typical Gate Charge Qg @ Vgs | 10.6nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HT8KB6 | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 17.2mΩ | ||
Channel Mode Depletion | ||
Typical Gate Charge Qg @ Vgs 10.6nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ROHM MOSFET is designed for demanding applications that require exceptional efficiency and reliability. The product's robust design, featuring a low on-resistance and high power capacity, positions it as an ideal choice for motor drives and other power management needs. It stands out with its compact HSMT8 packaging, ensuring ease of integration into various electronic systems.
Halogen free design supports compliance with global environmental standards
Guaranteed 100% Rg and UIS testing for enhanced reliability
Wide operating junction temperature range allows for versatile applications
High pulsed drain current capability supports demanding operational profiles
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