ROHM SCT Type N-Channel MOSFET, 17 A, 1200 V Enhancement, 7-Pin TO-263-7LA SCT3160KWAHRTL
- RS-stocknr.:
- 265-380
- Fabrikantnummer:
- SCT3160KWAHRTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 63,31
(excl. BTW)
€ 76,61
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 1.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 6,331 | € 63,31 |
| 100 + | € 6,014 | € 60,14 |
*prijsindicatie
- RS-stocknr.:
- 265-380
- Fabrikantnummer:
- SCT3160KWAHRTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-263-7LA | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 208mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Power Dissipation Pd | 100W | |
| Maximum Gate Source Voltage Vgs | 18 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2 mm | |
| Length | 15.4mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-263-7LA | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 208mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Power Dissipation Pd 100W | ||
Maximum Gate Source Voltage Vgs 18 V | ||
Maximum Operating Temperature 175°C | ||
Width 10.2 mm | ||
Length 15.4mm | ||
Standards/Approvals AEC-Q101 | ||
Height 4.5mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM MOSFET is an AEC-Q101 qualified automotive grade SiC trench MOSFET. It features high voltage resistance, low ON resistance, and fast switching speed, making it an ideal choice for demanding automotive applications that require efficient and reliable performance.
RoHS compliant
Pb free lead plating
Fast reverse recovery
Easy to parallel
Simple to drive
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