Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1
- RS-stocknr.:
- 284-755
- Fabrikantnummer:
- IQE022N06LM5SCATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 11,51
(excl. BTW)
€ 13,925
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,302 | € 11,51 |
| 50 - 95 | € 2,186 | € 10,93 |
| 100 - 495 | € 2,024 | € 10,12 |
| 500 - 995 | € 1,864 | € 9,32 |
| 1000 + | € 1,794 | € 8,97 |
*prijsindicatie
- RS-stocknr.:
- 284-755
- Fabrikantnummer:
- IQE022N06LM5SCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 151A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 151A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.
Optimised for power management
Supports synchronous rectification in SMPS
N channel with logic level compatibility
Very low on resistance for thermal performance
Superior thermal resistance for reliability
100% avalanche tested for operational assurance
Complies with environmental regulations
Comprehensive validation for industrial use
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