Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 8-Pin PG-WHSON-8 IQE065N10NM5SCATMA1

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RS-stocknr.:
284-779
Fabrikantnummer:
IQE065N10NM5SCATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WHSON-8

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for high performance applications, offering robust capabilities in synchronous rectification for Switch Mode Power Supplies. This N channel MOSFET features a compact PG WHSON 8 package, expertly designed to manage higher levels of power while ensuring maximum efficiency and reliability. It boasts a unique avalanche testing certification and superior thermal resistance, making it ideal for industrial applications where performance is critical. With a drain source voltage rating of 100 V and an impressively low on state resistance, this transistor stands out in the market. Its cutting edge design ensures that it meets the rigorous standards of the IEC60947 5 2 and RoHS compliance, thus catering to environmentally conscious manufacturers.

Optimised for high efficiency SMPS
100% avalanche tested for reliability
Superior thermal performance compared to competitors
Pb free lead plating for environmental compliance
Complies with RoHS for reduced ecological footprint
Halogen free construction minimizes environmental impact
Tailored for stringent industrial standards

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