Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -59 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC240P06LMATMA1

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RS-stocknr.:
285-053
Fabrikantnummer:
ISC240P06LMATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-59A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS Power Transistor

Package Type

PG-TDSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

188W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET is a cutting edge P Channel MOSFET designed to deliver exceptional performance in power management applications. Featuring a voltage rating of 60V, it excels in both high efficiency and low on resistance characteristics, ensuring minimal power loss during operation. Its robust design is 100% avalanche tested, providing peace of mind for engineers looking for reliable solutions in demanding environments. The transistor operates at logic level, making it suitable for a variety of control scenarios in industrial applications.

Injection moulded for thermal management

Validated to JEDEC standards for reliability

RoHS compliant for environmental adherence

Halogen free materials for sustainability

Optimised for high speed switching efficiency

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