Infineon IMB N-Channel MOSFET, 144 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R012M2HXTMA1
- RS-stocknr.:
- 349-094
- Fabrikantnummer:
- IMBG120R012M2HXTMA1
- Fabrikant:
- Infineon
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€ 25,37
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€ 30,70
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 25,37 |
| 10 - 99 | € 22,84 |
| 100 + | € 21,06 |
*prijsindicatie
- RS-stocknr.:
- 349-094
- Fabrikantnummer:
- IMBG120R012M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 144A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 600W | |
| Maximum Operating Temperature | 200°C | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 144A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25V | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 600W | ||
Maximum Operating Temperature 200°C | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Width 10.2mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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