Infineon CoolSiCTM Trench MOSFET Type N-Channel MOSFET, 200 A, 1200 V Enhancement EasyDUAL FF4MR12W2M1HPB11BPSA1

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€ 451,98

(excl. BTW)

€ 546,90

(incl. BTW)

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RS-stocknr.:
349-253
Fabrikantnummer:
FF4MR12W2M1HPB11BPSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

1200V

Series

CoolSiCTM Trench MOSFET

Package Type

EasyDUAL

Mount Type

Screw

Maximum Drain Source Resistance Rds

8.7mΩ

Channel Mode

Enhancement

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

20mW

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60068, IEC 60747, IEC 60749

Automotive Standard

No

Land van herkomst:
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET half bridge module is a 1200 V module featuring a low 4 mΩ gate resistance G1 and is equipped with an integrated NTC temperature sensor for precise thermal monitoring. It also includes pre applied thermal interface material for enhanced heat dissipation and utilizes PressFIT Contact Technology, ensuring reliable and efficient electrical connections. This module is designed for high performance applications where efficient power conversion and thermal management are critical.

Rugged mounting due to integrated mounting clamps

PressFIT contact technology

Integrated NTC temperature sensor

Pre applied thermal interface material

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