Infineon CoolSiC Type N-Channel MOSFET, 173 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R008M1HXUMA1

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RS-stocknr.:
349-329
Fabrikantnummer:
IMDQ75R008M1HXUMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

173A

Maximum Drain Source Voltage Vds

750V

Package Type

PG-HDSOP-22

Series

CoolSiC

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

10.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

625W

Typical Gate Charge Qg @ Vgs

178nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
MY
The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.

Infineon proprietary die attach technology

Cutting edge top side cooling package

Driver source pin available

Enhanced robustness to withstand bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Best in class thermal dissipation

Reduced switching losses through improved gate control

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