Infineon CoolSiC Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 4-Pin PG-TO-247-4-STD-NT6.7 AIMZH120R040M1TXKSA1
- RS-stocknr.:
- 349-376
- Fabrikantnummer:
- AIMZH120R040M1TXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 19,02
(excl. BTW)
€ 23,01
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 05 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 19,02 |
| 10 - 99 | € 17,12 |
| 100 + | € 15,78 |
*prijsindicatie
- RS-stocknr.:
- 349-376
- Fabrikantnummer:
- AIMZH120R040M1TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | CoolSiC | |
| Package Type | PG-TO-247-4-STD-NT6.7 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Power Dissipation Pd | 268W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101, AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series CoolSiC | ||
Package Type PG-TO-247-4-STD-NT6.7 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Power Dissipation Pd 268W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101, AEC-Q100 | ||
- Land van herkomst:
- CN
The Infineon SiC MOSFET features best in class switching performance, robustness against parasitic turn ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on board charger and DC to DC applications.
Very low switching losses
Best in class switching energy
Lowest device capacitances
Sense pin for optimized switching performance
Suitable for HV creepage requirements
Thinner leads for reduced risk of solder bridges
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