Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN2450N8-G
- RS-stocknr.:
- 598-247
- Fabrikantnummer:
- DN2450N8-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 2000 eenheden)*
€ 1.748,00
(excl. BTW)
€ 2.116,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 23 februari 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2000 + | € 0,874 | € 1.748,00 |
*prijsindicatie
- RS-stocknr.:
- 598-247
- Fabrikantnummer:
- DN2450N8-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Channel Type | N-Channel DMOS FET | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-252 (D-PAK-3) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion Mode | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.4mm | |
| Standards/Approvals | RoHS, ISO/TS‑16949 | |
| Height | 2.29mm | |
| Width | 3 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Channel Type N-Channel DMOS FET | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-252 (D-PAK-3) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion Mode | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Length 4.4mm | ||
Standards/Approvals RoHS, ISO/TS‑16949 | ||
Height 2.29mm | ||
Width 3 mm | ||
Automotive Standard No | ||
The Microchip Low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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