STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG

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RS-stocknr.:
719-466
Fabrikantnummer:
SCT018HU65G3AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

650V

Series

Sct

Package Type

HU3PAK

Mount Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance Rds

21.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79.4nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

388W

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

2.6V

Maximum Operating Temperature

175°C

Length

19mm

Height

3.6mm

Width

14.1 mm

Automotive Standard

AEC-Q101

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very low RDS(on) over the entire temperature range

High speed switching performances

Very fast and robust intrinsic body diode

Source sensing pin for increased efficiency

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