STMicroelectronics Sct N channel-Channel Power MOSFET, 60 A, 650 V Enhancement, 7-Pin HU3PAK SCT018HU65G3AG
- RS-stocknr.:
- 719-466
- Fabrikantnummer:
- SCT018HU65G3AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 18,02
(excl. BTW)
€ 21,80
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 80 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 18,02 |
| 5 + | € 17,48 |
*prijsindicatie
- RS-stocknr.:
- 719-466
- Fabrikantnummer:
- SCT018HU65G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 60A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | Sct | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 21.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 175°C | |
| Length | 19mm | |
| Height | 3.6mm | |
| Width | 14.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 60A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series Sct | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 21.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 175°C | ||
Length 19mm | ||
Height 3.6mm | ||
Width 14.1mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Gerelateerde Links
- STMicroelectronics SCT Type N-Channel MOSFET 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- STMicroelectronics SCT Type N-Channel Power MOSFET 1200 V Enhancement, 7-Pin HU3PAK
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT027W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT018W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT040W65G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 650 V Enhancement, 4-Pin SCT055W65G3-4AG