Infineon CoolSiC N channel-Channel Power MOSFET, 28 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R075M2HXTMA1

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€ 5,52

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RS-stocknr.:
762-918
Fabrikantnummer:
IMBG65R075M2HXTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

650V

Series

CoolSiC

Package Type

PG-TO263-7

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

95mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

124W

Typical Gate Charge Qg @ Vgs

32nC

Maximum Operating Temperature

175°C

Length

15mm

Standards/Approvals

RoHS

Height

4.5mm

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolSiC MOSFET delivers unparalleled performance, superior reliability, and great ease of use. It enables cost effective, highly efficient, and simplified designs to fulfill the ever‑growing system and market needs.

Ultra‑low switching losses

Enhances system robustness and reliability

Facilitates great ease of use and integration

Reduces the size, weight and bill of materials of the systems

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