onsemi PowerTrench Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263
- RS-stocknr.:
- 124-1414
- Fabrikantnummer:
- FDB050AN06A0
- Fabrikant:
- onsemi
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 124-1414
- Fabrikantnummer:
- FDB050AN06A0
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 11mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 245W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 11mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 245W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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