N-Channel MOSFET, 30 A, 80 V, 4+Tab-Pin LFPAK Renesas RJK0852DPB-WS#J5
- RS-stocknr.:
- 124-3703
- Fabrikantnummer:
- RJK0852DPB-WS#J5
- Fabrikant:
- Renesas Electronics
Op voorraad - levertijd 3 à 5 werkdagen.
Toegevoegd
Prijs Elk (in een pakket van 5)
€ 1,162
(excl. BTW)
€ 1,406
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 5 | € 1,162 | € 5,81 |
| 10 - 20 | € 1,046 | € 5,23 |
| 25 - 120 | € 0,952 | € 4,76 |
| 125 - 245 | € 0,872 | € 4,36 |
| 250 + | € 0,804 | € 4,02 |
| *prijsindicatie | ||
- RS-stocknr.:
- 124-3703
- Fabrikantnummer:
- RJK0852DPB-WS#J5
- Fabrikant:
- Renesas Electronics
Wetgeving en compliance
Productomschrijving
N-Channel Low Voltage MOSFETs up to 140V, Renesas Electronics
MOSFET Transistors, Renesas Electronics (NEC)
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 30 A |
| Maximum Drain Source Voltage | 80 V |
| Package Type | LFPAK |
| Mounting Type | Surface Mount |
| Pin Count | 4+Tab |
| Maximum Drain Source Resistance | 14 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 55 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Typical Gate Charge @ Vgs | 28 nC @ 4.5 V |
| Length | 5.3mm |
| Transistor Material | Si |
| Number of Elements per Chip | 1 |
| Width | 3.95mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.1V |
| Height | 1.03mm |
- RS-stocknr.:
- 124-3703
- Fabrikantnummer:
- RJK0852DPB-WS#J5
- Fabrikant:
- Renesas Electronics