ROHM RAF040P01 Type P-Channel MOSFET, 4 A, 12 V Enhancement, 3-Pin SOT-323 RAF040P01TCL
- RS-stocknr.:
- 124-6767
- Fabrikantnummer:
- RAF040P01TCL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 8,72
(excl. BTW)
€ 10,56
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,436 | € 8,72 |
| 100 - 180 | € 0,328 | € 6,56 |
| 200 - 480 | € 0,281 | € 5,62 |
| 500 - 980 | € 0,263 | € 5,26 |
| 1000 + | € 0,256 | € 5,12 |
*prijsindicatie
- RS-stocknr.:
- 124-6767
- Fabrikantnummer:
- RAF040P01TCL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Series | RAF040P01 | |
| Package Type | SOT-323 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 68mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 800mW | |
| Maximum Gate Source Voltage Vgs | -8 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.8 mm | |
| Length | 2.1mm | |
| Height | 0.82mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 12V | ||
Series RAF040P01 | ||
Package Type SOT-323 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 68mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 800mW | ||
Maximum Gate Source Voltage Vgs -8 V | ||
Maximum Operating Temperature 150°C | ||
Width 1.8 mm | ||
Length 2.1mm | ||
Height 0.82mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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