Infineon CoolMOS CE Type N-Channel MOSFET, 9 A, 550 V Enhancement, 4-Pin SOT-223 IPN50R650CEATMA1

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RS-stocknr.:
130-0914
Fabrikantnummer:
IPN50R650CEATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

9A

Maximum Drain Source Voltage Vds

550V

Package Type

SOT-223

Series

CoolMOS CE

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

650mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

15nC

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

5W

Forward Voltage Vf

0.83V

Maximum Operating Temperature

150°C

Width

3.7 mm

Height

1.7mm

Standards/Approvals

No

Length

6.7mm

Automotive Standard

No

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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