ROHM RYC002N05 Type N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-23 RYC002N05T316
- RS-stocknr.:
- 133-2856
- Fabrikantnummer:
- RYC002N05T316
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 100 eenheden)*
€ 13,70
(excl. BTW)
€ 16,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Plus verzending 300 stuk(s) vanaf 29 december 2025
- Laatste verzending 1.300 stuk(s) vanaf 05 januari 2026
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 100 - 400 | € 0,137 | € 13,70 |
| 500 - 900 | € 0,123 | € 12,30 |
| 1000 - 4900 | € 0,112 | € 11,20 |
| 5000 - 9900 | € 0,097 | € 9,70 |
| 10000 + | € 0,094 | € 9,40 |
*prijsindicatie
- RS-stocknr.:
- 133-2856
- Fabrikantnummer:
- RYC002N05T316
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | RYC002N05 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.5 mm | |
| Length | 3.1mm | |
| Height | 1.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series RYC002N05 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Width 1.5 mm | ||
Length 3.1mm | ||
Height 1.15mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Gerelateerde Links
- ROHM RUC N-Channel MOSFET 50 V, 3-Pin SOT-23 RUC002N05HZGT116
- ROHM N-Channel MOSFET 50 V SOT-723 RYM002N05T2CL
- onsemi N-Channel MOSFET 50 V, 3-Pin SOT-23 BSS138L
- onsemi N-Channel MOSFET 50 V, 3-Pin SOT-23 BVSS138LT1G
- onsemi N-Channel MOSFET 50 V, 3-Pin SOT-23 BSS138LT3G
- onsemi N-Channel MOSFET 50 V, 3-Pin SOT-23 BSS138LT1G
- ROHM RUC002N05 N-Channel MOSFET 50 V, 3-Pin SOT-323 RUC002N05T116
- ROHM RU1J002YN N-Channel MOSFET 50 V, 3-Pin SOT-323 RU1J002YNTCL
