onsemi PowerTrench P-Channel MOSFET, 2.6 A, 20 V, 4-Pin WLCSP FDZ661PZ
- RS-stocknr.:
- 145-5598
- Fabrikantnummer:
- FDZ661PZ
- Fabrikant:
- onsemi
Subtotaal (1 rol van 5000 eenheden)*
€ 1.420,00
(excl. BTW)
€ 1.720,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5000 + | € 0,284 | € 1.420,00 |
*prijsindicatie
- RS-stocknr.:
- 145-5598
- Fabrikantnummer:
- FDZ661PZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | WLCSP | |
| Series | PowerTrench | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 315 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.3V | |
| Maximum Power Dissipation | 1.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Number of Elements per Chip | 1 | |
| Width | 0.8mm | |
| Length | 0.8mm | |
| Typical Gate Charge @ Vgs | 6.3 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 0.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type WLCSP | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 315 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.3V | ||
Maximum Power Dissipation 1.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Number of Elements per Chip 1 | ||
Width 0.8mm | ||
Length 0.8mm | ||
Typical Gate Charge @ Vgs 6.3 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 0.15mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- MY
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