Infineon Isolated HEXFET 2 Type P, Type N-Channel MOSFET, 3.5 A, 30 V Enhancement, 8-Pin SOIC

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€ 1.176,00

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€ 1.424,00

(incl. BTW)

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  • Verzending vanaf 13 april 2026
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RS-stocknr.:
145-9491
Fabrikantnummer:
IRF9952TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type P, Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

400mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.82V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

6.1nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1.5mm

Width

4 mm

Length

5mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF


This versatile MOSFET delivers high performance in a Compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits


• Dual-channel configuration enhances design flexibility

• Surface mount design simplifies PCB assembly

• Low resistance (150mΩ and 400mΩ) reduces power loss

• High temperature operation (+150°C) ensures reliability in extreme conditions

• Improved gate charge characteristics enhance switching efficiency

• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications


• Power management solutions

• Electric vehicle systems for improved efficiency

• Industrial automation and control

• Renewable energy systems for optimal performance

• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?


The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?


It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?


Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?


Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?


With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.

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