Fabrikantnummer

IXYS HiperFET N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X

RS-stocknr.:: 146-4244
Fabrikantnummer:: IXFK66N85X
Fabrikant:: IXYS

IXYS HiperFET N-Channel MOSFET, 66 A, 850 V Enhancement, 3-Pin TO-264 IXFK66N85X

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.

RS-stocknr.:: 146-4244
Fabrikantnummer:: IXFK66N85X
Fabrikant:: IXYS

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	IXYS
	Series	HiperFET
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	66 A
	Maximum Drain Source Voltage (Vds)	850 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-264
	Automotive Standard	No
	Forward Voltage (Vf)	1.4 V
	Height	26.3 mm
	Length	20.3 mm
	Maximum Drain Source Resistance (Rds)	65 mΩ
	Maximum Gate Source Voltage (Vgs)	30 V
	Maximum Operating Temperature	150 °C
	Maximum Power Dissipation (Pd)	1.25 kW
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	No
	Typical Gate Charge (Qg) @ Vgs	230 nC
	Width	5.3 mm

	Alles selecteren
	Merk IXYS
	Series HiperFET
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 66 A
	Maximum Drain Source Voltage (Vds) 850 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-264
	Automotive Standard No
	Forward Voltage (Vf) 1.4 V
	Height 26.3 mm
	Length 20.3 mm
	Maximum Drain Source Resistance (Rds) 65 mΩ
	Maximum Gate Source Voltage (Vgs) 30 V
	Maximum Operating Temperature 150 °C
	Maximum Power Dissipation (Pd) 1.25 kW
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals No
	Typical Gate Charge (Qg) @ Vgs 230 nC
	Width 5.3 mm

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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