Nexperia BUK9M8560E Type N-Channel MOSFET, 12.8 A, 60 V Enhancement, 4-Pin LFPAK BUK9M85-60EX
- RS-stocknr.:
- 153-0662
- Fabrikantnummer:
- BUK9M85-60EX
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 13,45
(excl. BTW)
€ 16,275
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.500 stuk(s) vanaf 08 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 100 | € 0,538 | € 13,45 |
| 125 - 225 | € 0,339 | € 8,48 |
| 250 - 600 | € 0,321 | € 8,03 |
| 625 - 1225 | € 0,307 | € 7,68 |
| 1250 + | € 0,259 | € 6,48 |
*prijsindicatie
- RS-stocknr.:
- 153-0662
- Fabrikantnummer:
- BUK9M85-60EX
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12.8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Series | BUK9M8560E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 192mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 31W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 4.4nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Width | 2.6 mm | |
| Length | 3.4mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12.8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Series BUK9M8560E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 192mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 31W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 4.4nC | ||
Maximum Operating Temperature 175°C | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Width 2.6 mm | ||
Length 3.4mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 60 V, 85 mΩ logic level MOSFET in LFPAK33, Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
Gerelateerde Links
- Nexperia BUK9M8560E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK BUK9M24-60EX
- Nexperia BUK7M1560E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK BUK7M15-60EX
- Nexperia BUK9M5360E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK BUK9M53-60EX
- Nexperia BUK7M1260E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK BUK7M12-60EX
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- Nexperia BUK9M5360E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
- Nexperia BUK7M1260E Type N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK
