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Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Nexperia
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-5.3A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	57mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	5.44W
	Maximum Operating Temperature	150°C
	Height	1mm
	Standards/Approvals	No
	Width	1.4 mm
	Length	3mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Nexperia
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -5.3A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 57mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 5.44W
	Maximum Operating Temperature 150°C
	Height 1mm
	Standards/Approvals No
	Width 1.4 mm
	Length 3mm
	Automotive Standard AEC-Q101

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

Relay driver

High-speed line driver

High-side loadswitch

Switching circuits

Nexperia Type P-Channel MOSFET, -5.3 A, -20 V Enhancement, 3-Pin SOT-23

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