Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

RS-stocknr.:: 165-3003
Fabrikantnummer:: SI4900DY-T1-GE3
Fabrikant:: Vishay

Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

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RS-stocknr.:: 165-3003
Fabrikantnummer:: SI4900DY-T1-GE3
Fabrikant:: Vishay

Trans MOSFET N-CH 60V 4.3A N
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	4.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	58 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	2 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	2
Width	4mm
Typical Gate Charge @ Vgs	13 nC @ 10 V
Length	5mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1.55mm

Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC Vishay SI4900DY-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor