Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103GTRPBF
- RS-stocknr.:
- 165-5478
- Fabrikantnummer:
- IRLML5103GTRPBF
- Fabrikant:
- Infineon
Niet beschikbaar
RS heeft dit product niet meer op voorraad.
- RS-stocknr.:
- 165-5478
- Fabrikantnummer:
- IRLML5103GTRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 760 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 540 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.04mm | |
| Typical Gate Charge @ Vgs | 3.4 nC @ 10 V | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Height | 1.02mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 760 mA | ||
Maximum Drain Source Voltage 30 V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 540 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.04mm | ||
Typical Gate Charge @ Vgs 3.4 nC @ 10 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Height 1.02mm | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
Gerelateerde Links
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML5103TRPBF
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon HEXFET Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 IRLML2244TRPBF
