Fabrikantnummer

Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103GTRPBF

RS-stocknr.:: 165-5478
Fabrikantnummer:: IRLML5103GTRPBF
Fabrikant:: Infineon

Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103GTRPBF

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RS-stocknr.:: 165-5478
Fabrikantnummer:: IRLML5103GTRPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	760 mA
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-23
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	600 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	540 mW
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	1.4mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	3.4 nC @ 10 V
	Length	3.04mm
	Height	1.02mm
	Minimum Operating Temperature	-55 °C

	Alles selecteren
	Merk Infineon
	Channel Type P
	Maximum Continuous Drain Current 760 mA
	Maximum Drain Source Voltage 30 V
	Package Type SOT-23
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 600 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 540 mW
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 1.4mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 3.4 nC @ 10 V
	Length 3.04mm
	Height 1.02mm
	Minimum Operating Temperature -55 °C

Land van herkomst:: CN

Infineon HEXFET P-Channel MOSFET, 760 mA, 30 V, 3-Pin SOT-23 IRLML5103GTRPBF

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