Infineon HEXFET P-Channel MOSFET, 12 A, 30 V, 8-Pin SOIC IRF9328TRPBF
- RS-stocknr.:
- 165-5963
- Fabrikantnummer:
- IRF9328TRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4000 eenheden)*
€ 2.000,00
(excl. BTW)
€ 2.400,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 0,50 | € 2.000,00 |
*prijsindicatie
- RS-stocknr.:
- 165-5963
- Fabrikantnummer:
- IRF9328TRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 19.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 18 nC @ 4.5 V, 35 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 19.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 18 nC @ 4.5 V, 35 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
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