N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK Infineon IPD040N03LGBTMA1

Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

6.22mm

Length

6.73mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

38 nC @ 10 V

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

Height

2.41mm