Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

RS-stocknr.:: 165-6879
Fabrikantnummer:: BSZ086P03NS3EGATMA1
Fabrikant:: Infineon

Infineon OptiMOS P Type P-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin TSDSON BSZ086P03NS3EGATMA1

Subtotaal (1 rol van 5000 eenheden)*

€ 1.495,00

(excl. BTW)

€ 1.810,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 08 maart 2027

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Aantal stuks	Per stuk	Per rol*
5000 +	€ 0,299	€ 1.495,00

*prijsindicatie

RS-stocknr.:: 165-6879
Fabrikantnummer:: BSZ086P03NS3EGATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	30V
	Package Type	TSDSON
	Series	OptiMOS P
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	13.4mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	69W
	Forward Voltage Vf	-1.1V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	43.2nC
	Maximum Gate Source Voltage Vgs	-25V, +25V
	Maximum Operating Temperature	150°C
	Length	3.4mm
	Width	3.4mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 30V
	Package Type TSDSON
	Series OptiMOS P
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 13.4mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 69W
	Forward Voltage Vf -1.1V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 43.2nC
	Maximum Gate Source Voltage Vgs -25V, +25V
	Maximum Operating Temperature 150°C
	Length 3.4mm
	Width 3.4mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard No

N.v.t.

Land van herkomst:: CN

Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 40A Maximum Continuous Drain Current - BSZ086P03NS3EGATMA1

This MOSFET is a P‑channel enhancement device designed for high‑current switching in compact surface‑mount assemblies. It operates across a wide temperature range suitable for demanding electronic environments and is built to handle significant drain currents and power dissipation. The package is a low‑profile 8‑pin TSDSON for efficient PCB mounting and thermal performance.

Features and Benefits:

• Low on‑resistance reduces conduction losses during high currents
• 40A continuous drain current supports heavy load switching
• 69W maximum power dissipation enables higher power handling
• 43.2nC typical gate charge balances switching speed and drive effort
• 25V gate tolerance allows robust gate‑drive margins
• 30V drain‑source rating suits moderate voltage system designs

Applications

• Suitable for point‑of‑load power conversion modules
• Ideal for synchronous buck converter switches
• Used with battery management circuits in power systems
• Can be used for motor‑driver low‑side/power‑path control
• Appropriate for telecoms and server power rails

What thermal extremes can it withstand during operation?

It is specified to operate from -55°C up to 150°C, accommodating wide ambient and junction variations.

How many pins and which mounting method does it use?

The device uses an 8‑pin footprint and is intended for surface mounting in a TSDSON package.

What electrical characteristic limits conduction losses?

The device’s maximum drain‑source resistance is 13.4mΩ, which governs on‑state voltage drop and efficiency.

What gate‑driving considerations are relevant for switching design?

With a typical gate charge of 43.2nC and a maximum gate‑source rating of 25V, drive circuitry must supply sufficient charge while staying within voltage limits.