Name: Infineon HEXFET Type N-Channel Automotive MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252
Brand: Infineon
SKU: 165-7558
Price: 1.06 EUR
Availability: Discontinued

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Datasheets

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	Automotive MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	24.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Typical Gate Charge Qg @ Vgs	18nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	120W
	Maximum Operating Temperature	175°C
	Width	6.22 mm
	Standards/Approvals	Automotive (Q101)
	Length	6.73mm
	Height	2.39mm
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk Infineon
	Product Type Automotive MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 24.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Typical Gate Charge Qg @ Vgs 18nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 120W
	Maximum Operating Temperature 175°C
	Width 6.22 mm
	Standards/Approvals Automotive (Q101)
	Length 6.73mm
	Height 2.39mm
	Automotive Standard AEC-Q101

Land van herkomst:: CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRFR4105ZTRPBF

This MOSFET is designed for high efficiency and reliAbility across a variety of electronic applications. It is essential for voltage regulation and switching, meeting the needs of automation, electronics, and electrical engineering sectors with its robust performance. The device's low on-resistance and Ability to handle high continuous drain currents enable its use in demanding environments.

Features & Benefits

• Maximum continuous drain current of 30A ensures strong performance

• Operates at a maximum drain-source voltage of 55V for high voltage applications

• Low RDS(on) of 24.5mΩ improves energy efficiency

• Withstands temperature fluctuations up to +175°C

• Enhancement mode technology provides dependable switched operation

• DPAK TO-252 package allows for easy surface mounting

Applications

• Power management systems for effective voltage regulation

• Motor drivers and power converters in automation

• Switching power supplies and inverters

• Consumer electronics requiring efficient power control

What is the maximum gate threshold voltage?

The maximum gate threshold voltage is 4V, allowing for optimal gate control in switching applications.

Can it handle high temperatures?

Yes, this MOSFET operates efficiently at temperatures ranging from -55°C to +175°C, suitable for challenging environments.

Is this MOSFET suitable for surface mounting?

Yes, it comes in a DPAK TO-252 package designed for straightforward surface mount integration.

How does it compare with other MOSFETs in terms of power dissipation?

The maximum power dissipation capacity is 48W, enabling it to manage substantial loads effectively.

What types of applications are most compatible with this component?

It is particularly effective in applications requiring high efficiency, including motor control, power converters, and electrical systems in automation.

Infineon HEXFET Type N-Channel Automotive MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252