Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220 IRFB3307ZPBF

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RS-stocknr.:
165-7607
Fabrikantnummer:
IRFB3307ZPBF
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

79nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Width

4.82 mm

Length

10.66mm

Height

9.02mm

Standards/Approvals

No

Automotive Standard

No

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