onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 166-2610
- Fabrikantnummer:
- FDS6675BZ
- Fabrikant:
- onsemi
Tekort aan voorraad
Vanwege een wereldwijd voorraadtekort, weten we niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 166-2610
- Fabrikantnummer:
- FDS6675BZ
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 44nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Height | 1.5mm | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 44nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Height 1.5mm | ||
Width 4 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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