Infineon Dual HEXFET 2 Type N-Channel MOSFET, 8.1 A, 30 V Enhancement, 8-Pin SOIC

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€ 1.160,00

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€ 1.400,00

(incl. BTW)

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RS-stocknr.:
168-6026
Fabrikantnummer:
IRL6372TRPBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.1A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

23mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12 V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2W

Typical Gate Charge Qg @ Vgs

11nC

Transistor Configuration

Dual

Maximum Operating Temperature

150°C

Width

4 mm

Standards/Approvals

No

Length

5mm

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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