DiodesZetex Isolated 2 Type N-Channel Power MOSFET, 4.1 A, 60 V Enhancement, 8-Pin SOIC
- RS-stocknr.:
- 169-7498
- Fabrikantnummer:
- DMN6070SSD-13
- Fabrikant:
- DiodesZetex
Subtotaal (1 rol van 2500 eenheden)*
€ 435,00
(excl. BTW)
€ 527,50
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,174 | € 435,00 |
*prijsindicatie
- RS-stocknr.:
- 169-7498
- Fabrikantnummer:
- DMN6070SSD-13
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.75V | |
| Typical Gate Charge Qg @ Vgs | 5.6nC | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Width | 3.95 mm | |
| Height | 1.5mm | |
| Length | 4.95mm | |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.75V | ||
Typical Gate Charge Qg @ Vgs 5.6nC | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.5W | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Width 3.95 mm | ||
Height 1.5mm | ||
Length 4.95mm | ||
Standards/Approvals J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Gerelateerde Links
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC DMN6070SSD-13
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC DMN6040SSD-13
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin SOIC DMN6066SSD-13
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 40 V Enhancement, 8-Pin SOIC
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin SOIC
- DiodesZetex Isolated 2 Type N-Channel Power MOSFET 20 V Enhancement, 8-Pin SOIC