Infineon IPP075N15N3 G Type N-Channel MOSFET, 100 A, 150 V Enhancement, 4-Pin TO-220
- RS-stocknr.:
- 170-2323
- Fabrikantnummer:
- IPP075N15N3GXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,01
(excl. BTW)
€ 8,482
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 32 stuk(s) vanaf 05 januari 2026
- Plus verzending 500 stuk(s) vanaf 12 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,505 | € 7,01 |
| 10 - 18 | € 3,33 | € 6,66 |
| 20 - 48 | € 2,91 | € 5,82 |
| 50 - 98 | € 2,695 | € 5,39 |
| 100 + | € 2,485 | € 4,97 |
*prijsindicatie
- RS-stocknr.:
- 170-2323
- Fabrikantnummer:
- IPP075N15N3GXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPP075N15N3 G | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 7.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 11.17mm | |
| Width | 4.57 mm | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPP075N15N3 G | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 7.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 11.17mm | ||
Width 4.57 mm | ||
Length 10.36mm | ||
Automotive Standard No | ||
The 150V OptiMOS™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
Summary of Features:
Excellent switching performance
World’s lowest R DS(on)
Very low Q g and Q gd
Excellent gate charge x R DS(on) product (FOM)
Halogen free
Benefits:
Environmentally friendly
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Target Applications:
Synchronous rectification for AC-DC SMPS
Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
Isolated DC-DC converters (telecom and datacom systems
Or-ing switches and circuit breakers in 48V systems
Class D audio amplifiers
Uninterruptable power supplies (UPS)
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