P-Channel MOSFET, 3.9 A, 8 V, 6-Pin TSOP-6 Vishay SI3499DV-T1-GE3

RS-stocknr.:: 170-8323
Fabrikantnummer:: SI3499DV-T1-GE3
Fabrikant:: Vishay

P-Channel MOSFET, 3.9 A, 8 V, 6-Pin TSOP-6 Vishay SI3499DV-T1-GE3

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RS-stocknr.:: 170-8323
Fabrikantnummer:: SI3499DV-T1-GE3
Fabrikant:: Vishay

Si3499DV, P-Channel 1.5V (G-S) MOSFET
ESD Control Selection Guide V1

Kenmerk	Waarde
Channel Type	P
Maximum Continuous Drain Current	3.9 A
Maximum Drain Source Voltage	8 V
Package Type	TSOP-6
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	48 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.35V
Maximum Power Dissipation	1.1 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-5 V, +5 V
Number of Elements per Chip	1
Length	3.1mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Width	1.7mm
Typical Gate Charge @ Vgs	28 nC @ 4.5 V
Minimum Operating Temperature	-55 °C
Height	1mm

P-Channel MOSFET, 3.9 A, 8 V, 6-Pin TSOP-6 Vishay SI3499DV-T1-GE3

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor