Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1

RS-stocknr.:: 171-1939
Fabrikantnummer:: IPD068N10N3GATMA1
Fabrikant:: Infineon

Infineon IPD068N10N3 G Type N-Channel MOSFET, 90 A, 100 V Enhancement, 5-Pin TO-252 IPD068N10N3GATMA1

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Subtotaal (1 verpakking van 10 eenheden)*

€ 7,51

(excl. BTW)

€ 9,09

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

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Aantal stuks	Per stuk	Per verpakking*
10 - 90	€ 0,751	€ 7,51
100 - 240	€ 0,606	€ 6,06
250 - 490	€ 0,575	€ 5,75
500 - 990	€ 0,529	€ 5,29
1000 +	€ 0,436	€ 4,36

*prijsindicatie

RS-stocknr.:: 171-1939
Fabrikantnummer:: IPD068N10N3GATMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	100V
	Series	IPD068N10N3 G
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	12.3mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1V
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	51nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	150W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	7.47 mm
	Length	6.73mm
	Height	2.41mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 100V
	Series IPD068N10N3 G
	Package Type TO-252
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 12.3mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1V
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 51nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 150W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 7.47 mm
	Length 6.73mm
	Height 2.41mm
	Automotive Standard No

N.v.t.

Infineon MOSFET

The Infineon PG-TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 6.8mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 100V. It has a maximum power dissipation of 71W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Easy to design products

• Environmentally friendly

• Excellent gate charge x RDS (on) product (FOM)

• Excellent switching performance

• Halogen free

• Highest power density

• Increased efficiency

• Lead (Pb) free plating

• Less paralleling required

• Operating temperature ranges between -55°C and 175°C

• Smallest board space consumption

• Very low Qg and Qgd

• World's lowest RDS (on)

Applications

• Class D audio amplifiers

• Isolated DC-DC converters (telecom and data communication systems

• Motor control for 48V-80V systems (domestic vehicles, power tools, trucks)

• O-ring switches and circuit breakers in 48V systems

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC