Infineon BSC035N10NS5 Type N-Channel MOSFET, 100 A, 100 V Enhancement, 8-Pin TDSON BSC035N10NS5ATMA1
- RS-stocknr.:
- 171-1985
- Fabrikantnummer:
- BSC035N10NS5ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 13,32
(excl. BTW)
€ 16,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 1,332 | € 13,32 |
| 20 - 40 | € 1,123 | € 11,23 |
| 50 - 90 | € 1,094 | € 10,94 |
| 100 - 240 | € 1,066 | € 10,66 |
| 250 + | € 1,039 | € 10,39 |
*prijsindicatie
- RS-stocknr.:
- 171-1985
- Fabrikantnummer:
- BSC035N10NS5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSC035N10NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 156W | |
| Forward Voltage Vf | 0.82V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSC035N10NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 156W | ||
Forward Voltage Vf 0.82V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC035N10NS5 is the 100V OptiMOS 5 power MOSFET optimized for synchronous rectification and Ideal for high switching frequency.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
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