onsemi NVTFS6H850N Type N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN

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RS-stocknr.:
172-3321
Fabrikantnummer:
NVTFS6H850NTAG
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

68A

Maximum Drain Source Voltage Vds

80V

Series

NVTFS6H850N

Package Type

WDFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.5mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.8V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

107W

Maximum Operating Temperature

175°C

Length

3.15mm

Width

3.15 mm

Height

0.75mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

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