onsemi Dual NVMFD5C650NL 2 Type N-Channel MOSFET, 111 A, 60 V Enhancement, 8-Pin DFN NVMFD5C650NLWFT1G

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RS-stocknr.:
172-3345
Fabrikantnummer:
NVMFD5C650NLWFT1G
Fabrikant:
onsemi
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Merk

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

111A

Maximum Drain Source Voltage Vds

60V

Package Type

DFN

Series

NVMFD5C650NL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

16nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

125W

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Width

5.1 mm

Height

1.05mm

Length

6.1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.

Small Footprint (5x6 mm)

Compact Design

Low rDS(on)

Minimize Conduction Loss

Low QG and Capacitance

Minimize Driver Losses

NVMFD5C446NLWF − Wettable Flank Option

Enhanced Optical Inspection

PPAP Capable

Applications

Solenoid driver

Low side / high side driver

Automotive engine controllers

Antilock braking systems

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