Vishay IRFI730G Type N-Channel Power MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 178-0848
Fabrikantnummer:: IRFI730GPBF
Fabrikant:: Vishay

Vishay IRFI730G Type N-Channel Power MOSFET, 3.7 A, 400 V Enhancement, 3-Pin TO-220

Subtotaal (1 tube van 50 eenheden)*

€ 64,80

(excl. BTW)

€ 78,40

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Op voorraad

50 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 +	€ 1,296	€ 64,80

*prijsindicatie

RS-stocknr.:: 178-0848
Fabrikantnummer:: IRFI730GPBF
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.7A
	Maximum Drain Source Voltage Vds	400V
	Series	IRFI730G
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	1Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	1.6V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	38nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	35W
	Maximum Operating Temperature	150°C
	Width	4.8mm
	Height	9.8mm
	Standards/Approvals	RoHS
	Length	10.3mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.7A
	Maximum Drain Source Voltage Vds 400V
	Series IRFI730G
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 1Ω
	Channel Mode Enhancement
	Forward Voltage Vf 1.6V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 38nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 35W
	Maximum Operating Temperature 150°C
	Width 4.8mm
	Height 9.8mm
	Standards/Approvals RoHS
	Length 10.3mm
	Automotive Standard No

Datasheet

Vishay IRFI730G Series Power MOSFET, 400V Drain Source Voltage, 3.7A Maximum Continuous Drain Current - IRFI730GPBF

This power MOSFET is a high-voltage switching device used to control current in power-conversion and switching circuits. It is an enhancement-mode N-channel transistor designed for through-hole mounting in TO-220 packages and suited to applications requiring high drain-to-source voltage tolerance and standard single-supply gate drive arrangements.

Features and Benefits:

• 400V maximum drain-to-source voltage supports high-voltage switching • 3.7A continuous drain current enables moderate load handling • 35W maximum power dissipation allows sustained thermal loading • 1Ω maximum Rds(on) aids predictable conduction losses • 38nC typical gate charge for reliable switching performance • 20V gate-source rating provides wide drive tolerance

Applications

• Suitable for switch-mode power supplies in industrial equipment • Ideal for motor-drive gate stages in automation systems • Used for high-voltage relay replacement in control panels • Can be used for line-side snubber or clamp circuitry • Suitable for bench power supplies and laboratory power modules

What mounting considerations affect thermal management?

The through-hole TO-220 format permits direct heatsink attachment to the package tab for improved heat transfer and reduced junction temperature.

How does the device behave across extreme ambient temperatures?

The transistor operates between -55°C and 150°C, enabling use in environments with wide thermal variation while maintaining electrical characteristics.

What is the typical switching charge impact on drive circuits?

The 38nC gate charge defines the energy required from the driver and influences switching speed and driver current requirements during transitions.

Are there limits on gate drive to prevent damage?

The maximum gate-source voltage is 20V, which must not be exceeded to avoid gate-oxide stress and potential device failure.