Vishay Siliconix TrenchFET Type P-Channel MOSFET, 100 A, 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3
- RS-stocknr.:
- 178-3950
- Fabrikantnummer:
- SQD40031EL_GE3
- Fabrikant:
- Vishay Siliconix
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 10 eenheden)*
€ 12,24
(excl. BTW)
€ 14,81
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 660 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 1,224 | € 12,24 |
| 100 - 490 | € 1,043 | € 10,43 |
| 500 - 990 | € 0,918 | € 9,18 |
| 1000 + | € 0,796 | € 7,96 |
*prijsindicatie
- RS-stocknr.:
- 178-3950
- Fabrikantnummer:
- SQD40031EL_GE3
- Fabrikant:
- Vishay Siliconix
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay Siliconix | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 186nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 2.38 mm | |
| Height | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay Siliconix | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 186nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 2.38 mm | ||
Height 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Vrijgesteld
- Land van herkomst:
- TW
Vishay MOSFET
The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.2mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 136W and continuous drain current of 100A. It has a minimum and a maximum driving voltage of 4.5V and 10V. It is used in automotive applications. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 175°C
• TrenchFET power MOSFET
Certifications
• AEC-Q101
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested
• UIS tested
Gerelateerde Links
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252 SQD40031EL_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 4-Pin TO-252 SQD40061EL_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-70
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 40 V Enhancement, 8-Pin SO-8 SQJ415EP-T1_GE3
- Vishay Siliconix TrenchFET Type P-Channel MOSFET 30 V Enhancement, 6-Pin SC-70 SQA403EJ-T1_GE3