onsemi Dual 2 Type N-Channel Power MOSFET, 29 A, 40 V Enhancement, 8-Pin DFN NVMFD5C478NLT1G
- RS-stocknr.:
- 178-4470
- Fabrikantnummer:
- NVMFD5C478NLT1G
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 10 eenheden)*
€ 10,18
(excl. BTW)
€ 12,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Laatste voorraad RS
- Laatste 1.500 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 1,018 | € 10,18 |
*prijsindicatie
- RS-stocknr.:
- 178-4470
- Fabrikantnummer:
- NVMFD5C478NLT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 14.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | 175°C | |
| Forward Voltage Vf | 0.84V | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Maximum Power Dissipation Pd | 23W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | -55°C | |
| Length | 5.1mm | |
| Standards/Approvals | No | |
| Width | 6.1 mm | |
| Height | 1.05mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 14.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature 175°C | ||
Forward Voltage Vf 0.84V | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Maximum Power Dissipation Pd 23W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature -55°C | ||
Length 5.1mm | ||
Standards/Approvals No | ||
Width 6.1 mm | ||
Height 1.05mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- MY
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection.Suitable for automotive applications.
Features
Low on resistance
High current capability
PPAP capable
NVMFD5C478NLWF - Wettable Flanks Product
Benefits
Minimal conduction losses
Robust load performance
Safeguard against voltage overstress failures
Suitable for automotive applications
Enhanced Optical Inspection
Applications
Solenoid driver
Low side / high side driver
End Products
Automotive engine controllers
Antilock braking systems
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